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ABB 5SGA20H2501
Overview
The ABB 5SGA20H2501 is an efficient asymmetric Gate Turn-Off (GTO) thyristor created for high-voltage, high-current switching. Rated at 2000 A and 2500 V, it features ABB’s advanced free-floating silicon for reduced on-state and switching losses. This component boasts a sturdy 93.5 mm package, annular gate electrode, and a high mounting force tolerance of 20 kN, making it suitable for industrial power electronics and traction systems.
Key Features
Rated current: 2000 A
Blocking voltage: 2500 V
Asymmetric design for one-way blocking
Low conduction and switching losses
Annular gate electrode for even current distribution
Advanced free-floating silicon structure
Robust against cosmic radiation
Standard 93.5 mm diameter package
High mechanical strength (20 kN mounting force)
Technical Specifications
Product ID: 5SGA20H2501
Type: Asymmetric Gate Turn-Off Thyristor (GTO)
VDRM: 2500 V
ITGQM: 2000 A
Package Diameter: 93.5 mm
Package Height: 26 mm
Gross Weight: 0.81 kg
Mounting Force: 20 kN
Gate Structure: Annular electrode
Package Type: Industry-standard round housing
Radiation Resistance: High
Applications: Industrial drives, traction converters, HV inverters
Applications
Electric locomotives and rail traction
High-power motor drives
Heavy-duty DC converters and choppers
Static power controllers
HVDC transmission and power conditioning systems
Why Choose the 5SGA20H2501
Strong performance in challenging settings
High current and voltage ratings for demanding designs
ABB’s superior silicon and thermal engineering
Proven reliability in rail and industrial systems
Industry-standard design for easy replacement
Order Now
The ABB 5SGA20H2501 GTO thyristor is available for worldwide shipping. Precision-engineered for performance, power, and longevity in demanding industrial and rail systems.
Description
ABB 5SGA20H2501
Overview
The ABB 5SGA20H2501 is an efficient asymmetric Gate Turn-Off (GTO) thyristor created for high-voltage, high-current switching. Rated at 2000 A and 2500 V, it features ABB’s advanced free-floating silicon for reduced on-state and switching losses. This component boasts a sturdy 93.5 mm package, annular gate electrode, and a high mounting force tolerance of 20 kN, making it suitable for industrial power electronics and traction systems.
Key Features
Rated current: 2000 A
Blocking voltage: 2500 V
Asymmetric design for one-way blocking
Low conduction and switching losses
Annular gate electrode for even current distribution
Advanced free-floating silicon structure
Robust against cosmic radiation
Standard 93.5 mm diameter package
High mechanical strength (20 kN mounting force)
Technical Specifications
Product ID: 5SGA20H2501
Type: Asymmetric Gate Turn-Off Thyristor (GTO)
VDRM: 2500 V
ITGQM: 2000 A
Package Diameter: 93.5 mm
Package Height: 26 mm
Gross Weight: 0.81 kg
Mounting Force: 20 kN
Gate Structure: Annular electrode
Package Type: Industry-standard round housing
Radiation Resistance: High
Applications: Industrial drives, traction converters, HV inverters
Applications
Electric locomotives and rail traction
High-power motor drives
Heavy-duty DC converters and choppers
Static power controllers
HVDC transmission and power conditioning systems
Why Choose the 5SGA20H2501
Strong performance in challenging settings
High current and voltage ratings for demanding designs
ABB’s superior silicon and thermal engineering
Proven reliability in rail and industrial systems
Industry-standard design for easy replacement
Order Now
The ABB 5SGA20H2501 GTO thyristor is available for worldwide shipping. Precision-engineered for performance, power, and longevity in demanding industrial and rail systems.